Effect of surface states on electron transport in individual ZnO nanowires

被引：146

作者：

Liao, Zhi-Min

Liu, Kai-Jian

Zhang, Jing-Min

Xu, Jun

Yu, Da-Peng ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

来源：

PHYSICS LETTERS A | 2007年 / 367卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/j.physleta.2007.03.006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The current-voltage (I-V) characteristics of single ZnO nanowires have been studied in the humid air, dry air, vacuum, and under ultraviolet (UV) irradiation. A model of a single ZnO nanowire connected with two opposite diodes was proposed to calculate the observed I-V behaviors. The results show that the electrical characteristics are dominated by the reverse barrier height, and the barrier height can be adjusted by surface adsorption. which is ascribed to the effect of surface states on surface band bending and Fermi level pining. Furthermore, the nanowire exhibited an enormous increase of conductance upon UV irradiation and a considerable persistent photocurrent after withdraw of the UV excitation, which further confirms the surface states have a pronounced effect on the electronic transport in single ZnO nanowires. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：207 / 210

页数：4

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