Doping of a surface band on Si(111)√3 x √3-Ag -: art. no. 045312

被引:52
作者
Crain, JN
Gallagher, MC
McChesney, JL
Bissen, M
Himpsel, FJ
机构
[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[2] Lakehead Univ, Dept Phys, Thunder Bay, ON P7B 5E1, Canada
[3] Univ Wisconsin, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 04期
关键词
D O I
10.1103/PhysRevB.72.045312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A semiconducting surface-state band on Si(111) root 3 x root 3-Ag is doped by adsorption of additional Ag and Au atoms. Very high levels of doping can be achieved (0.0015-0.086 electrons per 1x1 unit cell), such that the silicon surface degenerates into a metal. The doping alters the band structure of the surface state and causes the rigid-band model to break down. The parabolic-band approximation breaks down as well. These observations shed light on the mechanism of doping at extreme levels.
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页数:4
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