Doping of a surface band on Si(111)√3 x √3-Ag -: art. no. 045312

被引：52

作者：

Crain, JN

Gallagher, MC

McChesney, JL

Bissen, M

Himpsel, FJ

机构：

[1] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA

[2] Lakehead Univ, Dept Phys, Thunder Bay, ON P7B 5E1, Canada

[3] Univ Wisconsin, Ctr Synchrotron Radiat, Stoughton, WI 53589 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.72.045312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A semiconducting surface-state band on Si(111) root 3 x root 3-Ag is doped by adsorption of additional Ag and Au atoms. Very high levels of doping can be achieved (0.0015-0.086 electrons per 1x1 unit cell), such that the silicon surface degenerates into a metal. The doping alters the band structure of the surface state and causes the rigid-band model to break down. The parabolic-band approximation breaks down as well. These observations shed light on the mechanism of doping at extreme levels.

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