Pure blue laser diodes based on nonpolar m-plane gallium nitride with InGaN waveguiding layers

被引：56

作者：

Okamoto, Kuniyoshi ^{[1
]}

Tanaka, Taketoshi ^{[1
]}

Kubota, Masashi ^{[1
]}

Ohta, Hiroaki ^{[1
]}

机构：

[1] ROHM Co Ltd, Res & Dev Headquarters, Kyoto 6158585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 33-35期

关键词：

nonpolar; m-plane; InGaN; laser diode; GaN bulk substrate;

D O I：

10.1143/JJAP.46.L820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Blue laser diodes (LDs) based on m-plane gallium nitride were demonstrated by using m-plane GaN substrates. The lasing wavelength and the threshold current under pulsed operation were 451.8 nm and 134 mA (22.3 kA/cm(2)), respectively. The device structures consisted of InGaN-based multi-quantum wells, InGaN guiding layers, and Al-containing cladding layers. The InGaN guiding layers play two roles; as appropriate optical waveguides for longer lasing wavelengths and for the prevention of macroscopic cracks parallel to the c-plane. The latter is an indispensable technology in order to fabricate nonpolar LDs for longer wavelengths beyond the blue region.

引用

页码：L820 / L822

页数：3

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