Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

被引：199

作者：

Chakraborty, A ^{[1
]}

Haskell, BA

Keller, S

Speck, JS

DenBaars, SP

Nakamura, S

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, UCSB Grp, ERATO JST, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1825612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonpolar (11(2) over bar 0) a-plane InGaN/GaN multiple-quantum-well light-emitting diodes were grown by metalorganic chemical vapor deposition on reduced-defect density hydride-vapor-phase-epitaxy lateral epitaxially overgrown a-plane GaN templates. Direct current output power of 240 muW was measured at 20 mA for a 300x300 mum(2) device, and dc output powers as high as 1.5 mW were measured at 250 mA. DC electroluminescence (EL) measurements yielded a peak at 413.5 nm, corresponding with the room-temperature photoluminescence peak. The EL peak position was independent of drive current and a 23.5 nm linewidth was realized at 20 mA. The current-voltage characteristics of these diodes showed a forward voltage (V-f) of 3.3 V with a series resistance of 7.8 Omega. (C) 2004 American Institute of Physics.

引用

页码：5143 / 5145

页数：3

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