Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

被引：19

作者：

Kobayashi, JT ^{[1
]}

Kobayashi, NP ^{[1
]}

Zhang, X ^{[1
]}

Dapkus, PD ^{[1
]}

Rich, DH ^{[1
]}

机构：

[1] Univ So Calif, Dept Mat Sci & Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 195卷 / 1-4期

关键词：

GaN; InGaN; quantum well; metalorganic chemical vapor deposition (MOCVD); AFM; CL; TEM;

D O I：

10.1016/S0022-0248(98)00598-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In0.16Ga0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：252 / 257

页数：6

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