Recombination dynamics of localized excitons in self-formed InGaN quantum dots

被引：22

作者：

Kawakami, Y ^{[2
]}

Narukawa, Y

Sawada, K

Saijyo, S

Fujita, S

Nakamura, S

机构：

[1] Kyoto Univ, Venture Business Lab, Kyoto, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan

[3] Nichia Chem Ind, Dept Res & Dev, Anan, Tokushima 774, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

recombination dynamics; excitons; quantum dots;

D O I：

10.1016/S0921-5107(97)00187-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dynamic behavior of radiative recombination has been assessed in the InGaN-based purple, blue and green light emitting diodes (LEDs), as well as in purple laser diode (LD) components by mt ans of lime-resolved electroluminescence (TREL) and time-reserved photoluminescence (TRPL) spectroscopy. It was found that excitons localized at deep trap centers play an important role in the recombination process. Microstructural analysis suggests that these centers originate from the In-rich regions, acting as quantum dots which are self-formed within the wells. The radiative lifetime of localized excitons in the LD structure was almost constant at 6 ns in the temperature range between 20 and 200 K, indicating the zero-dimensional feature of excitons. (C) 1997 Elsevier Science S.A.

引用

页码：256 / 263

页数：8

共 19 条

[1]

CHICHIBU S, 1996, APPL PHYS LETT, V69, P4194

[2] Time-resolved-spectrum studies of GaN light emitting diodes [J].