Time-resolved-spectrum studies of GaN light emitting diodes

被引：25

作者：

Choa, FS

Fan, JY

Liu, PL

Sipior, J

Rao, G

Carter, GM

Chen, YJ

机构：

[1] Dept. of Comp. Sci. and Elec. Eng., Univ. of Maryland Baltimore County, Baltimore

[2] Naval Research Laboratory, Washington

[3] Dept. of Elec. and Comp. Engineering, SUNY at Buffalo, Amherst

[4] Medical Biotechnology Center, Maryland Biotechnology Institute, University of Maryland at Baltimore, Baltimore

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期

关键词：

D O I：

10.1063/1.117183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved-emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination. (C) 1996 American Institute of Physics.

引用

页码：3668 / 3670

页数：3

共 6 条

[1] Light emitting diode-based nanosecond ultraviolet light source for fluorescence lifetime measurements
Araki, T
Misawa, H
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (12) : 5469 - 5472
[2] OBSERVATION OF TRANSIENT SPECTRA AND MODE PARTITION NOISE OF INJECTION-LASERS
LIU, PL
LEE, TP
BURRUS, CA
KAMINOW, IP
KO, JS
[J]. ELECTRONICS LETTERS, 1982, 18 (21) : 904 - 905
[3] PHOTOLUMINESCENCE DECAY DYNAMICS IN AN INGAN/ALGAN/GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODE
MOHS, G
FLUEGEL, B
GIESSEN, H
TAJALLI, H
PEYGHAMBARIAN, N
CHIU, PC
PHILLIPS, BS
OSINSKI, M
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1515 - 1517
[4] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
NAKAMURA, S
MUKAI, T
SENOH, M
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (13) : 1687 - 1689
[5] HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1868 - 1870
[6] NAKAMURA S, 1995, JPN J APPL PHYS, V34, P1797

← 1 →