Analysis of the Diffused Front Surface Field of n-type Silicon Solar Cells with a-Si/c-Si Heterojunction Rear Emitter

被引：15

作者：

Bivour, Martin ^{[1
]}

Ruediger, Marc ^{[1
]}

Reichel, Christian ^{[1
]}

Ritzau, Kurt-U ^{[1
]}

Hermle, Martin ^{[1
]}

Glunz, Stefan W. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany

来源：

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS) | 2011年 / 8卷

关键词：

Silicon hetero junction; rear emitter; front surfcace field; JUNCTION;

D O I：

10.1016/j.egypro.2011.06.122

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we focus on the optimization of small-area n(+)np(+) n-type silicon solar cells featuring an amorphous/crystalline silicon heterojunction (a-Si:H/c-Si SHJ) rear emitter. For cells with a locally c-Si(n(++)) diffused high-low junction underneath the front side metallization and a full-area c-Si(n(+)) diffused front surface field (FSF) in between, efficiencies of up to 20.6 % have been reached. It is shown by experiment and two-dimensional device simulation that when omitting the full-area c-Si(n(+)) FSF a sufficient two-dimensional majority carrier transport via the base to the local c-Si(n(++)) FSF can be secured. For the front side passivation of the c-Si base a stack of thermal SiO2/SiNx and Al2O3/SiNx was applied. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of SiliconPV 2011.

引用

页码：185 / 192

页数：8

共 25 条

[1]

[Anonymous], P 22 EUR PHOT SOL EN

[2] n-TYPE SILICON SOLAR CELLS WITH AMORPHOUS/CRYSTALLINE SILICON HETEROJUNCTION REAR EMITTER [J].

Bivour, Martin ;

Meinhardt, Christoph ;

Pysch, Damian ;

Reichel, Christian ;

Ritzau, K. -U. ;

Hermle, Martin ;

Glunz, Stefan W. .

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, :1304-1308

[3] Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter [J].

Bock, Robert ;

Mau, Susanne ;

Schmidt, Jan ;

Brendel, Rolf .

APPLIED PHYSICS LETTERS, 2010, 96 (26)

[4]

Choong G., 2010, Proceedings of the 25th European Photovoltaic Solar Energy Conference and Exhibition and the 5th World Conference on Photovoltaic Energy Conversion, P2505

[5] STUDY OF INJECTION EFFECTS ON BSF SILICON SOLAR-CELLS [J].

CID, M ;

RUIZ, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :507-513

[6]

Dauwe S, 2003, WORL CON PHOTOVOLT E, P1395

[7] Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells [J].

Dauwe, S ;

Mittelstädt, L ;

Metz, A ;

Hezel, R .

PROGRESS IN PHOTOVOLTAICS, 2002, 10 (04) :271-278

[8] HIGH-PERFORMANCE HIT SOLAR CELLS FOR THINNER SILICON WAFERS [J].

Fujishima, Daisuke ;

Inoue, Hirotada ;

Tsunomura, Yasufumi ;

Asaumi, Toshio ;

Taira, Shigeharu ;

Kinoshita, Toshihiro ;

Taguchi, Mikio ;

Sakata, Hitoshi ;

Maruyama, Eiji .

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, :3137-3140

[9] Effects of a-Si:H layer thicknesses on the performance of a-Si:H/c-Si heterojunction solar cells [J].

Fujiwara, Hiroyuki ;

Kondo, Michio .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)

[10] Field-effect passivation of the SiO2-Si interface [J].

Glunz, SW ;

Biro, D ;

Rein, S ;

Warta, W .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :683-691

← 1 2 3 →