HIGH-PERFORMANCE HIT SOLAR CELLS FOR THINNER SILICON WAFERS

被引：15

作者：

Fujishima, Daisuke ^{[1
]}

Inoue, Hirotada ^{[1
]}

Tsunomura, Yasufumi ^{[1
]}

Asaumi, Toshio ^{[1
]}

Taira, Shigeharu ^{[1
]}

Kinoshita, Toshihiro ^{[1
]}

Taguchi, Mikio ^{[1
]}

Sakata, Hitoshi ^{[1
]}

Maruyama, Eiji ^{[1
]}

机构：

[1] Sanyo Elect Co Ltd, Adv Energy Res Ctr, Kobe, Hyogo, Japan

来源：

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年

关键词：

D O I：

10.1109/PVSC.2010.5614460

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have been researching and developing HIT (Heterojunction with Intrinsic Thin-layer) solar cells to obtain high conversion efficiency. Last year, we updated the world's highest conversion efficiency, which was previously 22.3%, to 23.0% with a practical-sized HIT solar cell at the R&D stage. We have also been investigating the performance of thinner HIT solar cells using less than 100-mu m-thick crystalline Si (c-Si) wafers in order to effectively reduce the production cost. By using improved technologies, we succeeded in gaining the high conversion efficiency of 22.8% in a HIT solar cell with a 98-mu m-thick c-Si wafer and an excellent V-oc of 743 mV at the R&D stage. The accomplishment of the 22.8% cell demonstrates that HIT solar cells are advantageous to the use of thinner Si wafers because of certain HIT solar cell features.

引用

页码：3137 / 3140

页数：4

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