Array of CdSe QD-Sensitized ZnO Nanorods Serves as Photoanode for Water Splitting

被引：42

作者：

Chouhan, N. ^{[1
]}

Yeh, C. L. ^{[2
]}

Hu, S. F. ^{[3
]}

Huang, J. H. ^{[1
]}

Tsai, C. W. ^{[1
]}

Liu, R. S. ^{[1
]}

Chang, W. S. ^{[4
]}

Chen, K. H. ^{[5
]}

机构：

[1] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan

[2] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[4] Ind Technol Res Inst, Dept Nanotech Energy, Hsinchu 302, Taiwan

[5] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 10期

关键词：

QUANTUM DOTS; TIO2; NANOCRYSTALS; CDTE;

D O I：

10.1149/1.3473788

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Aqueous chemically grown ZnO nanorods (NRs) arrays were sensitized by CdSe quantum dots (QDs) and were investigated as photoanode for photoelectrochemical water splitting under visible light (>420 nm) illumination. Significant enhancement of the factors 1.6 and 6 was observed for CdSe (QD)-sensitized nonannealed and annealed samples of ZnO NRs over pristine ZnO NRs arrays, respectively. The highest photocurrent density of 2.48 mA/cm(2) was registered for the annealed CdSe (QD)/ZnO (NR) arrays films at zero applied voltage and 100 mW/cm(2) (AM 1.5 G, Air Mass 1.5 Global) power density and their corresponding photocurrent density for pristine ZnO NR array was recorded as 0.41 mA/cm(2). (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3473788] All rights reserved.

引用

页码：B1430 / B1433

页数：4

共 23 条

[1] Photochemical instability of CdSe nanocrystals coated by hydrophilic thiols [J].