Scanning force microscopy for the study of domain structure in ferroelectric thin films

被引：188

作者：

Gruverman, A ^{[1
]}

Auciello, O ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] MCNC,ELECTR TECHNOL DIV,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.589143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A piezoresponse technique based on scanning force microscopy (SFM) has been used for studying domain structure in ferroelectric thin films. Studies were performed on Pb(Zr-x,Ti-1-x)O-3(PZT) thin films produced by a sol-gel method. The piezoresponse images of the PZT films were taken before and after inducing polarization in the films by applying a direct current voltage between the bottom electrode and the SFM tip. Polarization induced patterns were written with 20 V pulses and subsequently imaged by the SFM piezoresponse technique. The effect of the film structure on the imaging resolution of domains is discussed. (C) 1996 American Vacuum Society.

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页码：602 / 605

页数：4

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