Omnidirectional reflective contacts for light-emitting diodes

被引：53

作者：

Gessmann, T ^{[1
]}

Schubert, EF

Graff, JW

Streubel, K

Karnutsch, C

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[3] Osram Opto Semicond, D-93049 Regensburg, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 11期

关键词：

light-emitting diodes (LEDs); lighting; omnidirectional reflectors (ODRs); optical materials; optical reflection; semiconductor materials; solid-state lighting;

D O I：

10.1109/LED.2003.817386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrically conductive onmidirectional reflector (ODR) is demonstrated in an AlGaInP light-emitting diode (LED). The ODR serves as p-type contact and comprises the semiconductor, a metal layer and an intermediate low-refractive index dielectric layer. The dielectric layer is perforated by an array of AuZn microcontacts thus enabling electrical conductivity. It is shown that the ODR significantly increases light extraction from an AlGaInP LED as compared to a reference LED employing a distributed Bragg reflector (DBR). External quantum efficiencies of 18% and 11% are obtained for the ODR- and the DBR-LED, respectively.

引用

页码：683 / 685

页数：3

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