1.4x efficiency improvement in transparent-substrate (AlxGa1-x)0.5In0.5P light-emitting diodes with thin (≤2000 Å) active regions

被引：43

作者：

Gardner, NF ^{[1
]}

Chui, HC

Chen, EI

Krames, MR

Huang, JW

Kish, FA

Stockman, SA

Kocot, CP

Tan, TS

Moll, N

机构：

[1] Hewlett Packard Co, Div Optoelect, San Jose, CA 95131 USA

[2] Hewlett Packard Co Labs, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improvement of 1.4X in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active layer to less than or equal to 2000 Angstrom and increasing the internal quantum efficiency by using multiple thin (less than or equal to 500 Angstrom) active layers. The maximum luminous efficiency achieved is 73.7 lm/W at lambda(p) similar to 615 nm and the maximum external quantum efficiency is 32.0% at lambda(p) similar to 632 nm. (C) 1999 American Institute of Physics. [S0003-6951(99)03515-9].

引用

页码：2230 / 2232

页数：3

共 10 条

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