Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes

被引：3

作者：

Inada, T. ^{[1
]}

Satake, A. ^{[1
]}

Fujiwara, K. ^{[1
]}

机构：

[1] Kyushu Inst Technol, Kitakyushu, Fukuoka 8048550, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674736

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electroluminescence (EL) spectral intensity has been investigated in the high-brightness green InGaN multiple-quantum-well light emitting diode (LED) in comparison with the single-quantum-well LED over a wide temperature range and as a function of injection current. It is found that the EL variation pattern with temperature and current is dramatically improved when the number of active wells increases as a result of enhanced carrier capture. The importance of vertical carrier capture processes is pointed out to explain the anomalous EL intensity variations at low temperatures.

引用

页码：2768 / +

页数：2

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