Band Alignment Tuning in Twin-Plane Superlattices of Semiconductor Nanowires

被引:36
作者
Akiyama, Toru [1 ]
Yamashita, Tomoki [1 ]
Nakamura, Kohji [1 ]
Ito, Tomonori [1 ]
机构
[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan
基金
日本学术振兴会;
关键词
Nanowire; twin-plane superlattices; band alingment; density functional calculations; ZINC-BLENDE POLYTYPISM; OPTICAL-PROPERTIES; GROWTH; GAAS;
D O I
10.1021/nl1027099
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The band alignments of twin-plane superlattices in semiconductor nanowires are systematically investigated on the basis of density functional calculations. Our calculations demonstrate that for nanowires with small diameters the quantum-confinement effect is prominent within wurtzite structure regions and the energy gap in wurtzite-structured nanowires is remarkably larger than that including zinc-blende structure. This results in the straddling band alignment, in which both electrons and holes are confined in zinc-blonde structure region. The analysis using a simple tight-binding methods also clarifies that the straddling band alignments can be realized when the diameters of nanowires are less than 4-8 nm, leading to full control of band alignments by varying the nanowire diameter. Our results provide the ability of band-alignment tuning and open new possibilities for band engineering.
引用
收藏
页码:4614 / 4618
页数:5
相关论文
共 32 条
[1]   An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].
Akiyama, T ;
Sano, K ;
Nakamura, K ;
Ito, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278
[2]   Structural stability and electronic structures of InP nanowires: Role of surface dangling bonds on nanowire facets [J].
Akiyama, Toru ;
Nakamura, Kohji ;
Ito, Tomonori .
PHYSICAL REVIEW B, 2006, 73 (23)
[3]   Twinning superlattices in indium phosphide nanowires [J].
Algra, Rienk E. ;
Verheijen, Marcel A. ;
Borgstrom, Magnus T. ;
Feiner, Lou-Fe ;
Immink, George ;
van Enckevort, Willem J. P. ;
Vlieg, Elias ;
Bakkers, Erik P. A. M. .
NATURE, 2008, 456 (7220) :369-372
[4]   Optical properties of rotationally twinned InP nanowire heterostructures [J].
Bao, Jiming ;
Bell, David C. ;
Capasso, Federico ;
Wagner, Jakob B. ;
Martensson, Thomas ;
Tragardh, Johanna ;
Samuelson, Lars .
NANO LETTERS, 2008, 8 (03) :836-841
[5]   Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy [J].
Bhunia, S ;
Kawamura, T ;
Fujikawa, S ;
Nakashima, H ;
Furukawa, K ;
Torimitsu, K ;
Watanabe, Y .
THIN SOLID FILMS, 2004, 464 :244-247
[6]  
Caroff P, 2009, NAT NANOTECHNOL, V4, P50, DOI [10.1038/nnano.2008.359, 10.1038/NNANO.2008.359]
[7]   Diameter dependence of mechanical, electronic, and structural properties of InAs and InP nanowires: A first-principles study [J].
dos Santos, Claudia L. ;
Piquini, Paulo .
PHYSICAL REVIEW B, 2010, 81 (07)
[8]   Single-nanowire electrically driven lasers [J].
Duan, XF ;
Huang, Y ;
Agarwal, R ;
Lieber, CM .
NATURE, 2003, 421 (6920) :241-245
[9]   Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. .
PHYSICAL REVIEW B, 2008, 77 (03)
[10]   Why does wurtzite form in nanowires of III-V zinc blende semiconductors? [J].
Glas, Frank ;
Harmand, Jean-Christophe ;
Patriarche, Gilles .
PHYSICAL REVIEW LETTERS, 2007, 99 (14)