Band Alignment Tuning in Twin-Plane Superlattices of Semiconductor Nanowires

被引:36
作者
Akiyama, Toru [1 ]
Yamashita, Tomoki [1 ]
Nakamura, Kohji [1 ]
Ito, Tomonori [1 ]
机构
[1] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan
基金
日本学术振兴会;
关键词
Nanowire; twin-plane superlattices; band alingment; density functional calculations; ZINC-BLENDE POLYTYPISM; OPTICAL-PROPERTIES; GROWTH; GAAS;
D O I
10.1021/nl1027099
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The band alignments of twin-plane superlattices in semiconductor nanowires are systematically investigated on the basis of density functional calculations. Our calculations demonstrate that for nanowires with small diameters the quantum-confinement effect is prominent within wurtzite structure regions and the energy gap in wurtzite-structured nanowires is remarkably larger than that including zinc-blende structure. This results in the straddling band alignment, in which both electrons and holes are confined in zinc-blonde structure region. The analysis using a simple tight-binding methods also clarifies that the straddling band alignments can be realized when the diameters of nanowires are less than 4-8 nm, leading to full control of band alignments by varying the nanowire diameter. Our results provide the ability of band-alignment tuning and open new possibilities for band engineering.
引用
收藏
页码:4614 / 4618
页数:5
相关论文
共 32 条
[21]  
Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865
[22]   Stability and electronic confinement of free-standing InP nanowires:: Ab initio calculations -: art. no. 193404 [J].
Schmidt, TM ;
Miwa, RH ;
Venezuela, P ;
Fazzio, A .
PHYSICAL REVIEW B, 2005, 72 (19)
[23]   A NEW SLAB MODEL APPROACH FOR ELECTRONIC-STRUCTURE CALCULATION OF POLAR SEMICONDUCTOR SURFACE [J].
SHIRAISHI, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (10) :3455-3458
[24]   Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures [J].
Spirkoska, D. ;
Arbiol, J. ;
Gustafsson, A. ;
Conesa-Boj, S. ;
Glas, F. ;
Zardo, I. ;
Heigoldt, M. ;
Gass, M. H. ;
Bleloch, A. L. ;
Estrade, S. ;
Kaniber, M. ;
Rossler, J. ;
Peiro, F. ;
Morante, J. R. ;
Abstreiter, G. ;
Samuelson, L. ;
Fontcuberta i Morral, A. .
PHYSICAL REVIEW B, 2009, 80 (24)
[25]   Crystallographic structure of InAs nanowires studied by transmission electron microscopy [J].
Tomioka, Katsuhiro ;
Motohisa, Junichi ;
Hara, Shinjiroh ;
Fukui, Takashi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49) :L1102-L1104
[26]   EFFICIENT PSEUDOPOTENTIALS FOR PLANE-WAVE CALCULATIONS [J].
TROULLIER, N ;
MARTINS, JL .
PHYSICAL REVIEW B, 1991, 43 (03) :1993-2006
[27]   THEORETICAL-STUDY OF SI/GE INTERFACES [J].
VAN DE WALLE, CG ;
MARTIN, RM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1256-1259
[28]   A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS [J].
VOGL, P ;
HJALMARSON, HP ;
DOW, JD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) :365-378
[29]   Growth and characterization of defect free GaAs nanowires [J].
Wacaser, BA ;
Deppert, K ;
Karlsson, LS ;
Samuelson, L ;
Seifert, W .
JOURNAL OF CRYSTAL GROWTH, 2006, 287 (02) :504-508
[30]   Coherent twinning phenomena: Towards twinning superlattices in III-V semiconducting nanowires [J].
Xiong, Qihua ;
Wang, J. ;
Eklund, P. C. .
NANO LETTERS, 2006, 6 (12) :2736-2742