THEORETICAL-STUDY OF SI/GE INTERFACES

被引：123

作者：

VAN DE WALLE, CG ^{[1
]}

MARTIN, RM ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1256 / 1259

页数：4

共 19 条

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