1ST-PRINCIPLES CALCULATION OF ENERGY OF AN EPITAXIAL SYSTEM

被引：23

作者：

BATRA, IP

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.29.7108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7108 / 7110

页数：3

共 31 条

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[5] ELECTRONIC STATES OF IDEAL GE-AL INTERFACES
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[6] COMPLETE AND INCOMPLETE WETTING OF KRYPTON AND OXYGEN ON GRAPHITE - REENTRANT TYPE-2 GROWTH ON A SCALE OF SUBSTRATE STRENGTH
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[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 983 - 987
[7] REDUCTION OF SILICON-ALUMINUM INTERDIFFUSION BY IMPROVED SEMICONDUCTOR SURFACE ORDERING
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 110 - 112
[8] A REVIEW OF RECENT ADVANCES IN SEMICONDUCTOR SUPER-LATTICES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 120 - 125
[9] ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPER-LATTICES
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ESAKI, L
[J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1999 - 2010
[10] COHEN ML, 1970, SOLID STATE PHYS, V24, P38

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