Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

被引：423

作者：

Spirkoska, D. ^{[1
,2
]}

Arbiol, J. ^{[3
]}

Gustafsson, A. ^{[4
]}

Conesa-Boj, S. ^{[3
]}

Glas, F. ^{[5
]}

Zardo, I. ^{[1
,2
]}

Heigoldt, M. ^{[1
,2
]}

Gass, M. H. ^{[6
]}

Bleloch, A. L. ^{[6
]}

Estrade, S. ^{[3
]}

Kaniber, M. ^{[1
,2
]}

Rossler, J. ^{[1
,2
]}

Peiro, F. ^{[3
]}

Morante, J. R. ^{[3
,7
]}

Abstreiter, G. ^{[1
,2
]}

Samuelson, L. ^{[4
]}

Fontcuberta i Morral, A. ^{[1
,2
,8
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[2] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[3] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

[4] Lund Univ, Nanometer Consortium, S-22100 Lund, Sweden

[5] CNRS LPN, F-91460 Marcoussis, France

[6] STFC Daresbury, SuperSTEM Lab, Daresbury WA4 4AD, England

[7] Catalonia Inst Energy Res, IREC, Barcelona 08019, Cat, Spain

[8] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 24期

基金：

瑞典研究理事会;

关键词：

cathodoluminescence; gallium arsenide; III-V semiconductors; nanowires; photoluminescence; Raman spectra; semiconductor heterojunctions; semiconductor quantum wells; semiconductor quantum wires; thermodynamics; time resolved spectra; transmission electron microscopy; ZINCBLENDE-TYPE SEMICONDUCTORS; TWINNING SUPERLATTICES; ELECTRONIC-PROPERTIES; DIAMOND-TYPE; GROWTH; POLYTYPISM; STABILITY; MECHANISM;

D O I：

10.1103/PhysRevB.80.245325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time-resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.

引用

页数：9

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