Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

被引：375

作者：

Colombo, C. ^{[1
]}

Spirkoska, D. ^{[1
]}

Frimmer, M. ^{[1
]}

Abstreiter, G. ^{[1
]}

Morral, A. Fontcuberta I. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.77.155326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As-4 pressure. Additionally, due to the small As-4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40 mu m.

引用

页数：5

共 17 条

[1] Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment [J].

Dubrovskii, VG ;

Cirlin, GE ;

Soshnikov, IP ;

Tonkikh, AA ;

Sibirev, NV ;

Samsonenko, YB ;

Ustinov, VM .

PHYSICAL REVIEW B, 2005, 71 (20)

[2] Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires [J].

Fontcuberta i Morral, A. ;

Colombo, C. ;

Abstreiter, G. ;

Arbiol, J. ;

Morante, J. R. .

APPLIED PHYSICS LETTERS, 2008, 92 (06)

[3] Diameter-dependent growth rate of InAs nanowires [J].

Froberg, L. E. ;

Seifert, W. ;

Johansson, J. .

PHYSICAL REVIEW B, 2007, 76 (15)

[4] Enhanced magneto-optics and size effects in ferromagnetic nanowire arrays [J].

Gonzalez-Diaz, Juan Bautista ;

Garcia-Martin, Antonio ;

Armelles, Gaspar ;

Navas, David ;

Vazquez, Manuel ;

Nielsch, Kornelius ;

Wehrspohn, Ralf B. ;

Goesele, Ulrich .

ADVANCED MATERIALS, 2007, 19 (18) :2643-+

[5] Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires [J].

Guichard, Alex R. ;

Barsic, David N. ;

Sharma, Shashank ;

Kamins, Theodore I. ;

Brongersma, Mark L. .

NANO LETTERS, 2006, 6 (09) :2140-2144

[6] Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy [J].

Heiss, Martin ;

Riedlberger, Eva ;

Spirkoska, Dance ;

Bichler, Max ;

Abstrelter, Gerhard ;

Fontcuberta i Morral, Anna .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (06) :1049-1056

[7] Observation of incubation times in the nucleation of silicon nanowires obtained by the vapor-liquid-solid method [J].

Kalache, B ;

Cabarrocas, PR ;

Morral, AF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7) :L190-L193

[8] Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms [J].

Kamins, TI ;

Williams, RS ;

Basile, DP ;

Hesjedal, T ;

Harris, JS .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1008-1016

[9] High aspect ratio silicon wire array photoelectrochemical cells [J].

Maiolo, James R., III ;

Kayes, Brendan M. ;

Filler, Michael A. ;

Putnam, Morgan C. ;

Kelzenberg, Michael D. ;

Atwater, Harry A. ;

Lewis, Nathan S. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (41) :12346-+

[10] Au-free epitaxial growth of InAs nanowires [J].

Mandl, Bernhard ;

Stangl, Julian ;

Martensson, Thomas ;

Mikkelsen, Anders ;

Eriksson, Jessica ;

Karlsson, Lisa S. ;

Bauer, Gunther ;

Samuelson, Lars ;

Seifert, Werner .

NANO LETTERS, 2006, 6 (08) :1817-1821

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