Tunable light emission from quantum-confined excitons in TiSi2-catalyzed silicon nanowires

被引:97
作者
Guichard, Alex R.
Barsic, David N.
Sharma, Shashank
Kamins, Theodore I.
Brongersma, Mark L.
机构
[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[2] Hewlett Packard Labs, Quntum Sci Res, Palo Alto, CA 94304 USA
关键词
D O I
10.1021/nl061287m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Visible and near-infrared photoluminescence (PL) at room temperature is reported from Si nanowires (NWs) grown by chemical vapor deposition from TiSi2 catalyst sites. NWs grown with average diameter of 20 nm were etched and oxidized to thin and passivate the wires. The PL emission blue shifted continuously with decreasing nanowire diameter. Slowed oxidation was observed for small nanowire diameters and provides a high degree of control over the emission wavelength. Transmission electron microscopy, PL, and time-resolved PL data are fully consistent with quantum confinement of charge carriers in the Si nanowire core being the source of luminescence. These light emitting nanowires could find application in future CMOS-compatible photonic devices.
引用
收藏
页码:2140 / 2144
页数:5
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共 32 条
  • [1] Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation
    Brongersma, ML
    Polman, A
    Min, KS
    Boer, E
    Tambo, T
    Atwater, HA
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (20) : 2577 - 2579
  • [2] Callister Jr W.D, 2000, MAT SCI ENG INTRO, Vfifth, P662
  • [3] Si-based materials and devices for light emission in silicon
    Castagna, ME
    Coffa, S
    Monaco, M
    Caristia, L
    Messina, A
    Mangano, R
    Bongiorno, C
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 16 (3-4) : 547 - 553
  • [4] The structural and luminescence properties of porous silicon
    Cullis, AG
    Canham, LT
    Calcott, PDJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 909 - 965
  • [5] Dynamics of stimulated emission in silicon nanocrystals
    Dal Negro, L
    Cazzanelli, M
    Pavesi, L
    Ossicini, S
    Pacifici, D
    Franzò, G
    Priolo, F
    Iacona, F
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4636 - 4638
  • [6] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
    DEAL, BE
    GROVE, AS
    [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
  • [7] THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON
    DELERUE, C
    ALLAN, G
    LANNOO, M
    [J]. PHYSICAL REVIEW B, 1993, 48 (15): : 11024 - 11036
  • [8] SIZE DEPENDENCE OF BAND-GAPS IN SILICON NANOSTRUCTURES
    DELLEY, B
    STEIGMEIER, EF
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (16) : 2370 - 2372
  • [9] Semiconductor nanowire laser and nanowire waveguide electro-optic modulators
    Greytak, AB
    Barrelet, CJ
    Li, Y
    Lieber, CM
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (15) : 1 - 3
  • [10] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899