Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

被引:47
作者
Heiss, Martin [1 ]
Riedlberger, Eva [1 ]
Spirkoska, Dance [1 ]
Bichler, Max [1 ]
Abstrelter, Gerhard [1 ]
Fontcuberta i Morral, Anna [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
growth model; nanowires; molecular beam epitaxy; selective area epitaxy; aluminium arsenide; indium arsenide; nanocolumns; semiconducting gallium arsenide;
D O I
10.1016/j.jcrysgro.2007.12.061
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Selective deposition of GaAs-based microstructures on a patterned SiO2/GaAs substrate was realized by molecular beam epitaxy. The growth mechanism was investigated experimentally by studying both the diffusion and desorption mechanisms of GaAs on SiO2 surfaces. A model describing the diffusion and desorption of adatoms on the patterned surface is presented. The theoretical considerations are used to determine experimentally the diffusion length and the sticking coefficient of Ga(As) on SiO2 as a function of temperature. The growth results are applied to the fabrication of GaAs-based quantum well microsctructures. Finally, the optical properties of InGaAs and AlGaAs heterostructures were examined by micro-photoluminescence spectroscopy, indicating the good quality of the material deposited by this method. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1049 / 1056
页数:8
相关论文
共 26 条
[1]   IN-SITU OBSERVATION OF GAAS SELECTIVE EPITAXY ON GAAS (111)B SUBSTRATES [J].
ALLEGRETTI, F ;
INOUE, M ;
NISHINAGA, T .
JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :354-358
[2]   Selective area growth by periodic supply molecular beam epitaxy [J].
Bacchin, G ;
Tsunoda, K ;
Nishinaga, T .
SURFACE REVIEW AND LETTERS, 1998, 5 (3-4) :731-738
[3]   Dependence of the degree of selectivity on the Al content during the selective area growth of AlGaAs on GaAs(001) by PSE/MBE [J].
Bacchin, G ;
Nishinaga, T .
JOURNAL OF CRYSTAL GROWTH, 1998, 191 (04) :599-606
[4]   Electroluminescence from a single pyramidal quantum dot in a light-emitting diode [J].
Baier, MH ;
Constantin, C ;
Pelucchi, E ;
Kapon, E .
APPLIED PHYSICS LETTERS, 2004, 84 (11) :1967-1969
[5]  
BIRNER S, EXECUTABLES DOCUMENT
[6]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[7]   INSITU BURIED GAINAS/INP QUANTUM DOT ARRAYS BY SELECTIVE AREA METALORGANIC VAPOR-PHASE EPITAXY [J].
GALEUCHET, YD ;
ROTHUIZEN, H ;
ROENTGEN, P .
APPLIED PHYSICS LETTERS, 1991, 58 (21) :2423-2425
[8]   Low-pressure organometallic chemical vapor deposition of quantum wires on V-grooved substrates [J].
Gustafsson, A ;
Reinhardt, F ;
Biasiol, G ;
Kapon, E .
APPLIED PHYSICS LETTERS, 1995, 67 (25) :3673-3675
[9]   Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy [J].
Horikoshi, Y .
JOURNAL OF CRYSTAL GROWTH, 1999, 201 :150-158
[10]   Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE [J].
Ikejiri, Keitaro ;
Noborisaka, Jinichiro ;
Hara, Shinjiroh ;
Motohisa, Junichi ;
Fukui, Takashi .
JOURNAL OF CRYSTAL GROWTH, 2007, 298 :616-619