Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

被引:31
作者
Baier, MH [1 ]
Constantin, C [1 ]
Pelucchi, E [1 ]
Kapon, E [1 ]
机构
[1] Swiss Fed Inst Technol Lausanne EPFL, Inst Quantum Elect & Photon, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.1687453
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication of a quantum-dot light-emitting diode (QD-LED), exhibiting electroluminescence from a single, self-formed QD obtained by epitaxial growth on pyramidal recess patterns. Moreover, selective carrier injection through a submicron metal contact and a 20-nm-wide self-formed low potential vertical channel connected to the QD active area is demonstrated, resulting in enhanced injection efficiency. The developed fabrication process offers full flexibility to control the number and position of the emitters down to a single QD in a micron-size compact LED. This makes this system an ideal candidate for efficient, electrically driven single-photon sources for quantum information applications. (C) 2004 American Institute of Physics.
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收藏
页码:1967 / 1969
页数:3
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