Structure and photoluminescence of single AlGaAs/GaAs quantum dots grown in inverted tetrahedral pyramids

被引：43

作者：

Hartmann, A ^{[1
]}

Ducommun, Y ^{[1
]}

Loubies, L ^{[1
]}

Leifer, K ^{[1
]}

Kapon, E ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期

关键词：

D O I：

10.1063/1.121810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arrays of single GaAs/AlGaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition in inverted tetrahedral pyramids on {111}B GaAs substrates are investigated. Cross-sectional atomic force microscopy images evidence a pronounced thickening of the GaAs quantum well layer at the tip of the pyramid, giving rise to a lens-like QD structure. Low- temperature photoluminescence and cathodoluminescence spectra show distinct luminescence from the dots, exhibiting filling of QD states separated by 33 meV at increased carrier densities. Luminescence linewidths of 15 meV and line energy variations of less than 5 meV are obtained across mm(2) sample areas. (C) 1998 American Institute of Physics. [S0003-6951(98)03442-1].

引用

页码：2322 / 2324

页数：3

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