Scaling quantum-dot light-emitting diodes to submicrometer sizes

被引：44

作者：

Fiore, A ^{[1
]}

Chen, JX

Ilegems, M

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1504880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce a device structure and a fabrication technique that allow the realization of efficient light-emitting diodes (LEDs) with dimensions of the active area in the approximate to100 nm range. Using optical lithography, selective oxidation, and an active region consisting of InAs quantum dots (QDs), we fabricated LEDs with light-current-voltage characteristics which scale well with nominal device area down to 600 nm diam at room temperature. The scaling behavior provides evidence for strong carrier confinement in the QDs and shows the potential for the realization of high-efficiency single-photon LEDs operating at room temperature. (C) 2002 American Institute of Physics.

引用

页码：1756 / 1758

页数：3

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