High-efficiency light-emitting diodes at ≈1.3 μm using InAs-InGaAs quantum dots

被引：28

作者：

Fiore, A ^{[1
]}

Oesterle, U ^{[1
]}

Stanley, RP ^{[1
]}

Ilegems, M ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microoptoelect, CH-1015 Lausanne, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 12期

关键词：

epitaxial growth; light-emitting diodes; quantum dots; semiconductor lasers;

D O I：

10.1109/68.896320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Light-emitting diodes (LEDs) based on long-wavelength, self-assembled InAs-InGaAs quantum dots (QDs) are demonstrated and characterized in this letter. The LEDs consist of a single layer of QDs positioned at lambda /2 from a top gold mirror to enhance the extraction efficiency, The external quantum efficiency at room temperature is 1%, which corresponds to an estimated 13% radiative efficiency, High-injection electroluminescence and photovoltage spectra under reverse bias allow us to determine the transition energies of excited states in the QDs and bidimensional states in the adjacent InGaAs quantum well.

引用

页码：1601 / 1603

页数：3

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