Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers

被引：20

作者：

Fry, PW ^{[1
]}

Harris, L

Parnell, SR

Finley, JJ

Ashmore, AD

Mowbray, DJ

Skolnick, MS

Hopkinson, M

Hill, G

Clark, JC

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC, Cent Facil Semicond 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 01期

关键词：

D O I：

10.1063/1.371908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The modal gain of an InAs/GaAs self-organized quantum dot laser is determined from a measurement of the normal incidence, interband photocurrent. The maximum modal gain of the ground state transition is shown to have a value of (7 +/- 3) cm(-1), considerably smaller than typical values for comparable quantum well lasers. The photocurrent technique is demonstrated to be a convenient and simple method for determining the spectral form of the gain and for comparing the modal gain of different devices. The consequences of the small modal gain for the laser characteristics are discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)09201-X].

引用

页码：615 / 617

页数：3

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