Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers

被引：66

作者：

Huang, XD ^{[1
]}

Stintz, A ^{[1
]}

Hains, CP ^{[1
]}

Liu, GT ^{[1
]}

Cheng, J ^{[1
]}

Malloy, KJ ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 01期

关键词：

Continuous wave lasers - Current density - Quantum efficiency - Semiconducting indium compounds - Semiconductor quantum dots;

D O I：

10.1049/el:20000124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Efficient, continuous-wave lasing operation of narrow-stripe, oxide-confined, long-wavelength InAs quantum dot lasers in the ground state (lambda similar or equal to 1.28 mu m) has been achieved at temperatures up to 100 degrees C. The lasers have a very low threshold current density (J(th) = 24 A/m(2)), high differential quantum efficiency (55), and very low internal loss (alpha(i) = 0.77cm(-1)).

引用

页码：41 / 42

页数：2

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