1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

被引：153

作者：

Mukai, K ^{[1
]}

Nakata, Y ^{[1
]}

Otsubo, K ^{[1
]}

Sugawara, M ^{[1
]}

Yokoyama, N ^{[1
]}

Ishikawa, H ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 10期

关键词：

crystal growth; lasers; quantum dots; semiconductor lasers; spontaneous emission; stimulated emission;

D O I：

10.1109/68.789692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter deals with the first 1.3-mu m continuous-wave (CW) lasing at room temperature of self-assembled In-GaAs-GaAs quantum dots. High-density 1.3-mu m emission dots were successfully formed by the combination of low-rate growth and InGaAs-layer overgrowth methods of molecular beam epitaxy. The 1.3-mu m ground-level CW lasing occurred at up to 40 degrees C, and the threshold current of 8 mA at 25 degrees C is less than one thirtieth of values ever reported for 1.3-mu m dot pulse lasers. The achievement represents a milestone for creating quantum-dot lasers applicable to fiber-optic communication system.

引用

页码：1205 / 1207

页数：3

共 11 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
ARAKAWA, Y
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS
ASADA, M
MIYAMOTO, Y
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1915 - 1921
[3] Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
Huffaker, DL
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (04) : 520 - 522
[4] 1.3 μm room-temperature GaAs-based quantum-dot laser
Huffaker, DL
Park, G
Zou, Z
Shchekin, OB
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2564 - 2566
[5] Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
Mukai, K
Nakata, Y
Shoji, H
Sugawara, M
Ohtsubo, K
Yokoyama, N
Ishikawa, H
[J]. ELECTRONICS LETTERS, 1998, 34 (16) : 1588 - 1590
[6] SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M
MUKAI, K
OHTSUKA, N
SUGAWARA, M
YAMAZAKI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1710 - L1712
[7] MUKAI K, 1999, SEMICONDUCT SEMIMET, V60, pCH3
[8] 1.3 μm room temperature emission from InAs/GaAs self-assembled quantum dots
Murray, R
Childs, D
Malik, S
Siverns, P
Roberts, C
Hartmann, JM
Stavrinou, P
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 528 - 530
[9] NAKATA Y, 46 SPRING M 1999 JPN, P376
[10] A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
Nishi, K
Saito, H
Sugou, S
Lee, JS
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1111 - 1113

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