Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots

被引：165

作者：

Huffaker, DL ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 04期

关键词：

D O I：

10.1063/1.121920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented characterizing the spectral emission and the electroluminescence efficiency dependence on growth conditions of 1.3 mu m wavelength InGaAs/GaAs quantum dots. We show that highly efficient 1.3 mu m room temperature electroluminescence can be achieved with only ten total deposited monolayers with an averaged In content of 50%. Atomic force microscopy shows that the 1.3 mu m wavelength quantum dots form with a density of similar to 1.3x10(10) cm(-2). (C) 1998 American Institute of Physics.

引用

页码：520 / 522

页数：3

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