Quantum dot resonant cavity light emitting diode operating near 1300nm

被引：25

作者：

Gray, JW ^{[1
]}

Childs, D ^{[1
]}

Malik, S ^{[1
]}

Siverns, P ^{[1
]}

Roberts, C ^{[1
]}

Stavrinou, PN ^{[1
]}

Whitehead, M ^{[1
]}

Murray, R ^{[1
]}

Parry, G ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 03期

关键词：

D O I：

10.1049/el:19990114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first demonstration of resonant cavity enhancement of optical emission from an InAs/GaAs quantum dot light emitting diode is reported. For emission around 1300nm, efficiency enhancements of greater than 10 for low current injection and greater than 3 for higher current injection for light coupled into a multimode optical fibre are observed.

引用

页码：242 / 243

页数：2

共 5 条

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