16-PERCENT EXTERNAL QUANTUM EFFICIENCY FROM PLANAR MICROCAVITY LEDS AT 940 NM BY PRECISE MATCHING OF CAVITY WAVELENGTH

被引:34
作者
BLONDELLE, J [1 ]
DENEVE, H [1 ]
DEMEESTER, P [1 ]
VANDAELE, P [1 ]
BORGHS, G [1 ]
BAETS, R [1 ]
机构
[1] IMEC,MAP,MBE,B-3001 LOUVAIN,BELGIUM
关键词
LIGHT EMITTING DIODES;
D O I
10.1049/el:19950884
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LEDs are reported. The use of regrowth for cavity resonance tuning and its effect on device performance, are demonstrated. The best results obtained include external quantum efficiencies of 16%. At 5mA, 1mW optical power is delivered with an intensity of 280 mu W/sr.
引用
收藏
页码:1286 / 1288
页数:3
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