6-PERCENT EXTERNAL QUANTUM EFFICIENCY FROM INGAAS/(AL)GAAS SINGLE-QUANTUM-WELL PLANAR MICROCAVITY LEDS

被引：11

作者：

BLONDELLE, J

DENEVE, H

DEMEESTER, P

VANDAELE, P

BORGHS, G

BAETS, R

机构：

[1] University of Gent-IMEC, Department of Information Technology, B-9000 Gent

[2] IMEC, MAP-MBE, B-3001 Leuven

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 21期

关键词：

LIGHT EMITTING DIODES; RESONATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19941216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High efficiency substrate emitting microcavity InGaAs/(Al)GaAs single QW LEDs are reported. The influence of the reflectivity of the bottom GaAs/AlAs DBR and cavity dimensions have been investigated. The best results obtained include peak external quantum efficiencies of 6.2%, and an intensity of 210 mu W/steradian at 10mA.

引用

页码：1787 / 1789

页数：3

共 6 条

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[2] DENEVE H, IN PRESS HIGH EFFICI
[3] INCREASED FIBER COMMUNICATIONS BANDWIDTH FROM A RESONANT-CAVITY LIGHT-EMITTING DIODE EMITTING AT LAMBDA=940 NM
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[4] POWER AND EFFICIENCY LIMITS IN SINGLE-MIRROR LIGHT-EMITTING-DIODES WITH ENHANCED INTENSITY
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[5] MICROCAVITY ENHANCED VERTICAL-CAVITY LIGHT-EMITTING-DIODES
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[J]. APPLIED PHYSICS LETTERS, 1993, 62 (24) : 3085 - 3087
[6] HIGHLY EFFICIENT LIGHT-EMITTING-DIODES WITH MICROCAVITIES
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ZYDZIK, GJ
[J]. SCIENCE, 1994, 265 (5174) : 943 - 945

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