RESONANT-CAVITY LIGHT-EMITTING DIODE AND DETECTOR USING EPITAXIAL LIFTOFF

被引：25

作者：

CORBETT, B

CONSIDINE, L

WALSH, S

KELLY, WM

机构：

[1] National Microelectronics Research Centre, University College, Cork

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期

关键词：

D O I：

10.1109/68.257185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial liftoff (ELO) is used in a novel manner to form arrays of vertical resonant cavity light emitting diodes (RCLED's) using two metal mirrors. The epitaxial layers consist of an InP/InGaAs p-i-n structure. Electroluminescence from the vertically emitting resonant cavity is measured CW at room temperature to have a spectral width of 9 meV in contrast to a photoluminescence spectral width of 51 meV for the unprocessed layers. The structure behaves as a resonant detector under reverse bias. Cavities formed in this manner will find wide application in surface emitting and detecting arrays and spatial light modulators, and as a means of studying the physics of spontaneous emission.

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收藏

页码：1041 / 1043

页数：3

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