High differential efficiency (>16%) quantum dot microcavity light emitting diode

被引:19
作者
Chen, H [1 ]
Zou, Z [1 ]
Cao, C [1 ]
Deppe, DG [1 ]
机构
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
关键词
D O I
10.1063/1.1434310
中图分类号
O59 [应用物理学];
学科分类号
摘要
Data are presented on high differential efficiency quantum dot microcavity light emitting diodes. The data show that differential efficiencies >16% can be achieved by the use of quantum dots to reduce carrier diffusion in small oxide-apertured microcavities. The measured efficiencies are sensitive to both microcavity tuning of the resonance peak to the quantum dot light emitters, and nonradiative recombination effects brought on by temperature, bias current, and edge effects. The peak efficiencies are obtained at a resonance temperature of similar to160 K. (C) 2002 American Institute of Physics.
引用
收藏
页码:350 / 352
页数:3
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