Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

被引:122
作者
Ikejiri, Keitaro
Noborisaka, Jinichiro
Hara, Shinjiroh
Motohisa, Junichi
Fukui, Takashi
机构
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
关键词
nanostructures; metalorganic vapor phase epitaxy; selective epitaxy; semiconducting gallium arsenide;
D O I
10.1016/j.jcrysgro.2006.10.179
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We studied the growth mechanism of GaAs nanowires in selective-area metalorganic vapor phase epitaxy (MOVPE) by investigating the dependences on substrate orientations and growth conditions. The nanowire structures were formed only on GaAs (I I l)B substrate under high temperature (750 degrees C) and low arsine partial pressure conditions. Structures selectively grown on substrates with various orientations always exhibited specific low-index facets such as { 110}, {111}A, and {111}B. It was also found that the appearance of these facets depended strongly on the growth conditions. Furthermore, we have observed a considerable lateral growth on the sidewalls of the nanowires when the growth temperature was lowered and arsine partial pressure was increased, indicating that the growth mode could be changed by the growth conditions. These results demonstrate that the growth mechanism of GaAs nanowires by SA-MOVPE is neither catalyst nor oxide assisted but by the formation of facets during growth. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:616 / 619
页数:4
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