Vertically aligned, catalyst-free InP nanowires grown by metalorganic chemical vapor deposition

Vertically-aligned InP nanowires are grown by metalorganic chemical vapor deposition (MOCVD) without the use of a deposited metal catalyst. A surface reconstruction induces indium droplets to form on the surface and thus act as nucleation sites for nanowire growth. Vertical growth from the InP(111)B substrate along with transmission electron microscopy (TEM) analysis indicate epitaxial growth from the substrate in the [111]B direction. A uniform cross section along the longitudinal axis can be achieved by optimizing the input V/III ratio. Small variations in the diameter and length are seen under optimal growth conditions. (C) 2005 American Institute of Physics.