Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy

被引:17
作者
Bhunia, S
Kawamura, T
Fujikawa, S
Tokushima, K
Watanabe, Y
机构
[1] NTT Corp, NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Himeji Inst Technol, Himeji, Hyogo 67122, Japan
关键词
InP; nanowires; MOVPE; electron microscopy; photoluminescence;
D O I
10.1016/j.physe.2003.11.083
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Metalorganic vapor phase epitaxial technique has been used to grow surface mounted vertical and uniform cross-sectional InP nanowires on a wafer scale basis. The growth was carried out under the vapor-liquid-solid mechanism using Au colloidal nanoparticles of nominal diameters of 10 and 20 nm, and their properties were compared. The effect of the pre-growth anneals and growth temperatures on the stability of the nanowires were studied in detail. Scanning electron microscopy and transmission electron microscopic studies showed average diameter of the nanowires in the range of 20-35 nm, and of length 700 nm with growth direction of <111>. Room temperature photoluminescence measurements of the nanowires grown on 10 and 20 mn Au particles showed strong peaks, which were blue shifted by 25 and 32 meV, respectively, compared to bulk InP. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:583 / 587
页数:5
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共 10 条
  • [1] Metalorganic vapor-phase epitaxial growth and characterization of vertical InP nanowires
    Bhunia, S
    Kawamura, T
    Watanabe, Y
    Fujikawa, S
    Tokushima, K
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (16) : 3371 - 3373
  • [2] Nanowire resonant tunneling diodes
    Björk, MT
    Ohlsson, BJ
    Thelander, C
    Persson, AI
    Deppert, K
    Wallenberg, LR
    Samuelson, L
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4458 - 4460
  • [3] One-dimensional heterostructures in semiconductor nanowhiskers
    Björk, MT
    Ohlsson, BJ
    Sass, T
    Persson, AI
    Thelander, C
    Magnusson, MH
    Deppert, K
    Wallenberg, LR
    Samuelson, L
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (06) : 1058 - 1060
  • [4] Synthesis and optical properties of gallium arsenide nanowires
    Duan, XF
    Wang, JF
    Lieber, CM
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (09) : 1116 - 1118
  • [5] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Duan, XF
    Huang, Y
    Cui, Y
    Wang, JF
    Lieber, CM
    [J]. NATURE, 2001, 409 (6816) : 66 - 69
  • [6] GAAS P-N-JUNCTION FORMED IN QUANTUM WIRE CRYSTALS
    HARAGUCHI, K
    KATSUYAMA, T
    HIRUMA, K
    OGAWA, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (06) : 745 - 747
  • [7] GROWTH AND OPTICAL-PROPERTIES OF NANOMETER-SCALE GAAS AND INAS WHISKERS
    HIRUMA, K
    YAZAWA, M
    KATSUYAMA, T
    OGAWA, K
    HARAGUCHI, K
    KOGUCHI, M
    KAKIBAYASHI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) : 447 - 462
  • [8] Schottky diodes based on a single GaN nanowire
    Kim, JR
    Oh, H
    So, HM
    Kim, JJ
    Kim, J
    Lee, CJ
    Lyu, SC
    [J]. NANOTECHNOLOGY, 2002, 13 (05) : 701 - 704
  • [9] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E )
    WAGNER, RS
    ELLIS, WC
    [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &
  • [10] Silicon nanowires grown on a pre-annealed Si substrate
    Zeng, XB
    Xu, YY
    Zhang, SB
    Hu, ZH
    Diao, HW
    Wang, YQ
    Kong, GL
    Liao, XB
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) : 13 - 16