Silicon nanowires grown on a pre-annealed Si substrate

被引：36

作者：

Zeng, XB ^{[1
]}

Xu, YY ^{[1
]}

Zhang, SB ^{[1
]}

Hu, ZH ^{[1
]}

Diao, HW ^{[1
]}

Wang, YQ ^{[1
]}

Kong, GL ^{[1
]}

Liao, XB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 247卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

chemical vapor deposition processes; nanomaterials; semiconducting silicon;

D O I：

10.1016/S0022-0248(02)01901-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Polycrystalline Si nanowires (poly SiNWS) were successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440degreesC using silane as the Si source and Au as the catalyst. The diameters of Si nanowires range from 15 to 100nm. The growth process indicates that to fabricate SiNWS by PECVD, pre-annealing at high temperature is necessary. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：13 / 16

页数：4

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