Catalytic synthesis of straight silicon nanowires over Fe containing silica gel substrates by chemical vapor deposition

被引：28

作者：

Liu, ZQ ^{[1
]}

Xie, SS ^{[1
]}

Zhou, WY ^{[1
]}

Sun, LF ^{[1
]}

Li, YB ^{[1
]}

Tang, DS ^{[1
]}

Zou, XP ^{[1
]}

Wang, CY ^{[1
]}

Wang, G ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 224卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

low dimensional structures; chemical vapor deposition processes; nanomaterials; semiconducting silicon;

D O I：

10.1016/S0022-0248(01)01022-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a new method to synthesize very straight silicon nanowires using a porous iron/SiO2 gel as a template by thermal chemical vapor deposition at a temperature of about 500 degreesC. Scanning electron microscopy, transmission electron microscopy and Raman scattering spectroscopy were used to characterize the samples. The results show that a large amount of straight Si nanowires with diameters of about 30 nm and lengths of about 1 mum was obtained. High-resolution transmission electron microscopy observation shows that microtwin defects lie in the straight silicon nanowires. Raman scattering from the nanowires shows a larger line width (about 15 cm(-1)) and a down-shifted (about 9 cm(-1)) peak as compared to that of bulk crystalline silicon. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：230 / 234

页数：5

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