SiO2-enhanced synthesis of Si nanowires by laser ablation

被引：188

作者：

Wang, N ^{[1
]}

Zhang, YF ^{[1
]}

Tang, YH ^{[1
]}

Lee, CS ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Ctr Super Diamond & Adv Film, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 26期

关键词：

D O I：

10.1063/1.122930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si nanowires with uniform size have been synthesized by laser ablation of highly pure Si powder targets mixed with SiO2. A bulk quantity of Si nanowires was successfully obtained by mixing 30%-70% of SiO2 into the Si powder target. SiO2 played a crucial role in enhancing the formation and growth of the Si nanowires. The morphology and microstructure of the Si nanowire tips have been systematically characterized by means of high-resolution transmission electron microscopy. No evidence of metal was found at the tips. The results suggest that Si oxide is more important than metal in catalyzing the formation of Si nanowires. (C) 1998 American Institute of Physics. [S0003-6951(98)03452-4].

引用

页码：3902 / 3904

页数：3

共 19 条

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