RAMAN ANALYSIS OF LIGHT-EMITTING POROUS SILICON

被引:303
作者
SUI, ZF
LEONG, PP
HERMAN, IP
HIGASHI, GS
TEMKIN, H
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] COLUMBIA UNIV,MICROELECTR SCI LAB,NEW YORK,NY 10027
关键词
D O I
10.1063/1.107097
中图分类号
O59 [应用物理学];
学科分类号
摘要
Porous silicon that strongly emits in the visible was analyzed using Raman scattering. The spectrum peaks near 508 cm-1, has a width of approximately 40 cm-1, and is very asymmetric. Using a model of phonon confinement, this suggests that the local structure of porous silicon is more like a sphere than a rod and has a characteristic diameter of 2.5-3.0 nm. Polarization Raman measurements suggest that the structure does not consist of a series of parallel columns.
引用
收藏
页码:2086 / 2088
页数:3
相关论文
共 18 条
[1]   STRAIN IN POROUS SI FORMED ON A SI (100) SUBSTRATE [J].
BAI, G ;
KIM, KH ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1990, 57 (21) :2247-2249
[2]   MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].
BEALE, MIJ ;
CHEW, NG ;
UREN, MJ ;
CULLIS, AG ;
BENJAMIN, JD .
APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88
[3]   POROUS SILICON - THE MATERIAL AND ITS APPLICATIONS IN SILICON ON INSULATOR TECHNOLOGIES [J].
BOMCHIL, G ;
HALIMAOUI, A ;
HERINO, R .
APPLIED SURFACE SCIENCE, 1989, 41-2 :604-613
[4]  
Bomchil G., 1988, Microelectronic Engineering, V8, P293, DOI 10.1016/0167-9317(88)90022-6
[5]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[6]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[7]   PREFERENTIAL PROPAGATION OF PORES DURING THE FORMATION OF POROUS SILICON - A TRANSMISSION ELECTRON-MICROSCOPY STUDY [J].
CHUANG, SF ;
COLLINS, SD ;
SMITH, RL .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :675-677
[8]   ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J].
DIMARIA, DJ ;
KIRTLEY, JR ;
PAKULIS, EJ ;
DONG, DW ;
KUAN, TS ;
PESAVENTO, FL ;
THEIS, TN ;
CUTRO, JA ;
BRORSON, SD .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :401-416
[9]   THE CHARACTERIZATION OF POROUS SILICON BY RAMAN-SPECTROSCOPY [J].
GOODES, SR ;
JENKINS, TE ;
BEALE, MIJ ;
BENJAMIN, JD ;
PICKERING, C .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) :483-487
[10]   ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS [J].
HALIMAOUI, A ;
OULES, C ;
BOMCHIL, G ;
BSIESY, A ;
GASPARD, F ;
HERINO, R ;
LIGEON, M ;
MULLER, F .
APPLIED PHYSICS LETTERS, 1991, 59 (03) :304-306