Novel pulsed-laser-deposition-VO2 thin films for ultrafast applications

被引：19

作者：

Liu, H ^{[1
]}

Vasquez, O ^{[1
]}

Santiago, VR ^{[1
]}

Diaz, L ^{[1
]}

Rua, AJ ^{[1
]}

Fernandez, FE ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 05期

关键词：

VO2; thin film; ultrafast; pulsed-laser-deposition (PLD);

D O I：

10.1007/s11664-005-0056-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

VO2 thin films deposited on fused quartz substrates were successfully fabricated by the pulsed-laser-deposition (PLD) technique. The obtained samples were examined by microscopy and x-ray diffraction (XRD). The films show a fast, passive thermochromic effect of semiconductor-to-metal phase transition (PT) with a characteristic hysterisis at similar to 68 degrees C. The thermochromic effect was measured as resistivity, optical transmission, and reflection versus temperature. Under pulsed laser excitation, an optically induced ultrafast PT Of VO2 thin film was observed. Using the degenerate-four-wave-mixing (DFWM) technique, it was found that excited state dynamics is responsible for the induced lattice reorientation polarization, which results in the ultrafast PT.

引用

页码：491 / 496

页数：6

共 11 条

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