Band-tail parameter modeling in semiconductor materials

被引：37

作者：

Iribarren, A

Castro-Rodriguez, R

Sosa, V

Pena, JL

机构：

[1] Univ La Habana, Inst Mat & React, DIEES, Havana 10400, Cuba

[2] IPN, CINVESTAV, Dept Fis Aplicada, Merida 97310, Yucatan, Mexico

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.58.1907

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analytical formulation and modeling for determining the band-tail parameter E-0 taking into account the canrier-impurity and phonon-carrier interactions and the structural disorder is presented. An analysis of the different contributions to E-0 at low and room temperature in n- and p-type GaAs is also done. The theoretical results agree very well with experiment for noncompensated GaAs samples. The agreement was achieved in a wide range of carrier concentrations at 5 K and room temperature by adding a constant value to E-0, lower than 4.1 meV, related to the structural disorder.

引用

页码：1907 / 1911

页数：5

共 16 条

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