Disorder-recrystallization effects in low-energy beam-solid interactions

被引：21

作者：

Beck, M. J. ^{[1
]}

Schrimpf, R. D. ^{[2
]}

Fleetwood, D. M. ^{[1
,2
]}

Pantelides, S. T. ^{[1
,3
]}

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[3] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.100.185502

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

It is widely believed that high-kinetic-energy (> 1 keV) recoils in crystalline Si result in the formation of amorphous regions, whereas low-kinetic-energy recoils lead directly to isolated point defects. Here we study the response of a Si crystal using dynamical density-functional calculations and show that recoils of much less than 1 keV result in highly disordered regions that persist for hundreds of femtoseconds. Therefore, beam-induced defect formation is controlled by recrystallization processes during dynamic annealing even following low-energy ion implantation.

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