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Transition metal impurities in 3C-SiC and 2H-SiC

被引：7
作者：
Assali, LVC
Machado, WVM
Justo, JF
机构：
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Univ Sao Paulo, Escola Politecn, BR-05424970 Sao Paulo, Brazil
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
silicon carbide; transition metals; LAPW methods;
D O I：
10.1016/j.physb.2003.09.008
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electronic and structural properties of 3d transition metal (TM) impurities in 3C-SiC and 2H-SiC have been investigated by ab initio calculations. The stability, spin states, formation and transition energies of isolated Ti, V, and Cr impurities in several charge states were computed. Our results were compared to available experimental data. (C) 2003 Elsevier B.V. All rights reserved.
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页码：116 / 120
页数：5
相关论文
共 22 条
[1]   Band-gap states of Ti, V, and Cr in 4H-SiC: Identification and characterization by elemental transmutation of radioactive isotopes [J].
Achtziger, N ;
Witthuhn, W .
PHYSICAL REVIEW B, 1998, 57 (19) :12181-12196
[2]   Electronic properties and hyperfine parameters of gold-3d-transition-metal impurity pairs in silicon [J].
Assali, LVC ;
Justo, JF .
PHYSICAL REVIEW B, 1998, 58 (07) :3870-3878
[3]   Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies [J].
Baranov, PG ;
Il'in, IV ;
Mokhov, EN ;
Khramtsov, VA .
PHYSICS OF THE SOLID STATE, 1999, 41 (05) :783-785
[4]   First-principles studies of Ti impurities in SiC [J].
Barbosa, KO ;
Machado, WVM ;
Assali, LVC .
PHYSICA B-CONDENSED MATTER, 2001, 308 (308-310) :726-729
[5]  
BARBOSA KO, 2003, THESIS U SAO PAULO
[6]  
Baur J, 1997, PHYS STATUS SOLIDI A, V162, P153, DOI 10.1002/1521-396X(199707)162:1<153::AID-PSSA153>3.0.CO
[7]  
2-3
[8]  
BLAHA P, 1999, WIEN97 FULL POTENTIA
[9]  
Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO
[10]  
2-0
123