Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies

被引：8

作者：

Baranov, PG ^{[1
]}

Il'in, IV ^{[1
]}

Mokhov, EN ^{[1
]}

Khramtsov, VA ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1130872

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

EPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC. A study was made of nickel and manganese in nominally pure GaN grown by the sandwich sublimation method. The first EPR investigation of Er in 6H-SiC is reported. Erbium was identified from the hfs of the EPR spectra. Various possible models of erbium centers in silicon carbides are discussed. Strong room-temperature erbium-ion luminescence was observed. (C) 1999 American Institute of Physics. [S1063-7834(99)02705-7].

引用

页码：783 / 785

页数：3

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