Erbium in silicon carbide crystals: EPR and high-temperature luminescence

被引：6

作者：

Baranov, PG ^{[1
]}

Ilyin, IV ^{[1
]}

Mokhov, EN ^{[1
]}

Pevtsov, AB ^{[1
]}

Khramtsov, VA ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 1999年 / 41卷 / 01期

关键词：

D O I：

10.1134/1.1130723

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Erbium ions have been incorporated for the first time in bulk 6H-SiC crystals during growth, and they were unambiguously identified from the Er-167 EPR hyperfine structure. High-temperature luminescence of erbium ions at a wavelength of 1.54 mu m has been detected. The observed luminescence exhibits an increase in intensity with increasing temperature. The observation of Er luminescence in 6H-SiC offers a promising potential for development of semiconductor light-emitting devices at a wavelength within the fiber-optics transparency window. (C) 1999 American Institute of Physics. [S1063-7834(99)00901-6].

引用

页码：32 / 34

页数：3

共 9 条

[1] Electron paramagnetic resonance of erbium in bulk silicon carbide crystals [J].

Baranov, PG ;

Ilyin, IV ;

Mokhov, EN .

SOLID STATE COMMUNICATIONS, 1997, 103 (05) :291-295

[2] Electron paramagnetic resonance of erbium doped silicon [J].

Carey, JD ;

Donegan, JF ;

Barklie, RC ;

Priolo, F ;

Franzo, G ;

Coffa, S .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3854-3856

[3] INTENSE ERBIUM-1.54-MU-M PHOTOLUMINESCENCE FROM 2 TO 525 K IN ION-IMPLANTED 4H, 6H, 15R, AND 3C SIC [J].

CHOYKE, WJ ;

DEVATY, RP ;

CLEMEN, LL ;

YOGANATHAN, M ;

PENSL, G ;

HASSLER, C .

APPLIED PHYSICS LETTERS, 1994, 65 (13) :1668-1670

[4]

Jantsch W., 1996, P 23 INT C PHYS SEM, P3025

[5] MAGNETIC CIRCULAR-DICHROISM AND SITE-SELECTIVE OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE DEEP AMPHOTERIC VANADIUM IMPURITY IN 6H-SIC [J].

KUNZER, M ;

MULLER, HD ;

KAUFMANN, U .

PHYSICAL REVIEW B, 1993, 48 (15) :10846-10854

[6]

Masterov V.F., 1993, FIZ TEKH POLUPROVODN, V27, P1435

[7] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON [J].

MICHEL, J ;

BENTON, JL ;

FERRANTE, RF ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

XIE, YH ;

POATE, JM ;

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2672-2678

[8] Erbium implanted thin film photonic materials [J].

Polman, A .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :1-39

[9] EPITAXIAL-GROWTH OF SILICON-CARBIDE LAYERS BY SUBLIMATION SANDWICH METHOD .1. GROWTH-KINETICS IN VACUUM [J].

VODAKOV, YA ;

MOKHOV, EN ;

RAMM, MG ;

ROENKOV, AD .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (06) :729-740

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