INTENSE ERBIUM-1.54-MU-M PHOTOLUMINESCENCE FROM 2 TO 525 K IN ION-IMPLANTED 4H, 6H, 15R, AND 3C SIC

被引：76

作者：

CHOYKE, WJ ^{[1
]}

DEVATY, RP ^{[1
]}

CLEMEN, LL ^{[1
]}

YOGANATHAN, M ^{[1
]}

PENSL, G ^{[1
]}

HASSLER, C ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,W-8520 ERLANGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed intense line spectra in the neighborhood of 1.54 mu m from erbium-implanted samples of 4H, 6H, 15R, and 3C SiC. Samples were implanted to a fluence of about 10(13) erbium ions/cm(2) using four implant energies. An anneal at 1700 degrees C in a SiC cavity was used. The temperature dependence of the integrated luminescence intensity from 1.49 to 1.64 mu m varies very little from 2 to 400 K. No major differences are found for the spectra of the hexagonal and rhombohedral polytypes but there is a difference for cubic SiC (3C SiC).

引用

页码：1668 / 1670

页数：3

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