PHOTOLUMINESCENT PROPERTIES OF ER-DOPED IN1-XGAXP PREPARED BY METALORGANIC VAPOR-PHASE EPITAXY

被引：36

作者：

NEUHALFEN, AJ ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期

关键词：

D O I：

10.1063/1.106055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atmospheric pressure metalorganic vapor phase epitaxy has been used to prepare Er-doped In1-xGaxP layers using an Er beta-diketonate precursor as the dopant source. Temperature-dependent photoluminescent properties were studied as a function of alloy composition for x = 0-0.98. All the Er-doped In1-xGaP layers exhibited strong characteristic Er3+ intra-4f-shell photoluminescent emission at 0.801 eV which was independent of the alloy composition. A thermal quenching of the Er3+-related emission was observed and depended on the alloy composition. For In1-xGaxP alloys with x > 0.2, Er3+-related luminescence is observed at 295 K.

引用

页码：2317 / 2319

页数：3

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